Title :
GaN-Based LEDs With Sapphire Debris Removed by Phosphoric Etching
Author :
Chang, Shoou-Jinn ; Kuo, D.S. ; Lam, K.T. ; Wen, K.H. ; Ko, T.K. ; Hon, S.J.
Author_Institution :
Inst. of Microelectron. & Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The authors proposed a simple hot phosphoric etching method to enhance output power of GaN-based light-emitting diodes (LEDs) by 34%. By immersing the sample in H3PO4 at 220°C for 40 min, it was found that debris contaminants induced by nanosecond laser scribing could be effectively removed. It was also found that the hot phosphoric etching method will not degrade electrical characteristics of the fabricated LEDs.
Keywords :
III-V semiconductors; etching; gallium compounds; laser materials processing; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; GaN; GaN-based LED; debris contaminant; electrical characteristic; hot phosphoric etching method; light-emitting diode; nanosecond laser; sapphire debris; temperature 220 degC; time 40 min; Current measurement; Educational institutions; Etching; Gallium nitride; Light emitting diodes; Power generation; Substrates; GaN; hot phosphoric etching; laser scribing; light emitting diodes; sapphire substrate;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2167972
