Title :
Silicon Carbide Power Modules for High-Temperature Applications
Author :
Palmer, Michael J. ; Johnson, R. Wayne ; Autry, Tracy ; Aguirre, Rizal ; Lee, Victor ; Scofield, James D.
Author_Institution :
Dept. of Electr. Commun. Eng., Auburn Univ., Auburn, AL, USA
Abstract :
A hermetic multichip power package for silicon carbide devices that will operate at 200°C ambient and switch 50-100 A has been developed. The Al2O3/MoCu structure, in which the SiC junction field-effect transistors and diodes are attached, was designed to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding, and lid attach, as well as thermal modeling, electrical testing, and thermal cycling results are also described.
Keywords :
diodes; electronics packaging; field effect transistors; microassembling; silicon compounds; wide band gap semiconductors; SiC; SiC junction field-effect transistor; die attach; diode; electrical testing; hermetic multichip power package; high-temperature application; lid attach; ribbon bonding; silicon carbide device; silicon carbide power module; thermal cycling; thermal modeling; Ceramics; Copper; JFETs; Seals; Silicon carbide; Substrates; Hermetic power package; SiC die attach; high current switching; high-temperature operation;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2011.2171343
