Silicon Carbide Power Modules for High-Temperature Applications

Author

Palmer, Michael J. ; Johnson, R. Wayne ; Autry, Tracy ; Aguirre, Rizal ; Lee, Victor ; Scofield, James D.

Author_Institution

Dept. of Electr. Commun. Eng., Auburn Univ., Auburn, AL, USA

Volume

2

Issue

2

fYear

2012

Firstpage

208

Lastpage

216

Abstract

A hermetic multichip power package for silicon carbide devices that will operate at 200^°C ambient and switch 50-100 A has been developed. The Al₂O₃/MoCu structure, in which the SiC junction field-effect transistors and diodes are attached, was designed to hermetically seal the device areas. Details of the materials and processes used to fabricate the package are discussed. Die attach, ribbon bonding, and lid attach, as well as thermal modeling, electrical testing, and thermal cycling results are also described.

Keywords

diodes; electronics packaging; field effect transistors; microassembling; silicon compounds; wide band gap semiconductors; SiC; SiC junction field-effect transistor; die attach; diode; electrical testing; hermetic multichip power package; high-temperature application; lid attach; ribbon bonding; silicon carbide device; silicon carbide power module; thermal cycling; thermal modeling; Ceramics; Copper; JFETs; Seals; Silicon carbide; Substrates; Hermetic power package; SiC die attach; high current switching; high-temperature operation;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2011.2171343

Filename

6081910