Title :
A new calculation approach of transistor noise parameters as a function of gatewidth and bias current
Author :
Gasmi, Ahmed ; Huyart, Bernard ; Bergeault, Eric ; Jallet, Louis P.
Author_Institution :
Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France
fDate :
3/1/1997 12:00:00 AM
Abstract :
In this paper a new method to calculate the noise parameters of transistors Ti (MESFET or HEMT) as a function of gatewidth and drain-bias current is presented. This method needs the knowledge of the R, P, and C coefficients. It is based on the measurement of the noise parameters of a reference transistor T,r at two bias points (Ids1 and Ids2), and the equivalent circuit elements´ values of all transistors Ti. Using this method, the noise parameters (Fmin, Γopt, Rn ) for two MESFET´s Ti biased at another current Ids3 are obtained. Good agreement between the predicted and measured noise parameters´ values is obtained for a broad frequency range (4-20 GHz)
Keywords :
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 4 to 20 GHz; HEMT; MESFET; drain-bias current; equivalent circuit; gatewidth; transistor noise parameters; Circuit noise; Equivalent circuits; Frequency measurement; HEMTs; Integrated circuit measurements; Integrated circuit noise; MESFETs; Noise measurement; Temperature dependence; Temperature sensors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
