Title :
Transimpedance amplifiers based on Si/SiGe MODFETs
Author :
Saxarra, M. ; Glück, M. ; Albers, J.N. ; Behammer, D. ; Langmann, U. ; König, U.
Author_Institution :
Dept. of Electron Devices, Ruhr-Univ., Bochum, Germany
fDate :
3/5/1998 12:00:00 AM
Abstract :
For the first time, two-stage transimpedance amplifiers using n-type Si/SiGe-MODFETs have been fabricated in order to check the potential of this novel device generation for analogue designs. S-parameter measurements showed -3 dBΩ bandwidths of 1.8 GHz with a transimpedance gain of 56 dBΩ. Circuits with lower bandwidths reached values for transimpedances of up to 72 dBΩ
Keywords :
Ge-Si alloys; HEMT circuits; S-parameters; amplifiers; silicon; 1.8 GHz; S-parameter; Si-SiGe; analogue design; bandwidth; gain; n-type Si/SiGe MODFET; two-stage transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980370
