Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation

Author

Song, Jae-Joon ; Choi, Bo Kyoung ; Zhang, En Xia ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Park, Chan-Hoon ; Jeong, Yoon-Ha ; Kim, Ohyun

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

58

Issue

6

fYear

2011

Firstpage

2871

Lastpage

2875

Abstract

The total ionizing dose response of triple-gate MOSFETs is investigated for various fin widths and bias conditions. Experiments and simulations are used to analyze the buildup of trapped charge in the buried oxide and its impact on the threshold-voltage shift and subthreshold-slope degradation. The higher total-dose tolerance of multiple-gate FinFETs with narrow fins is attributed to lateral gate control over the electrostatic potential in the body and especially at the Si fin/BOX interface. It is demonstrated that ON-state irradiation is the worst-case bias configuration for triple-gate MOSFETs through extensive experimental analysis.

Keywords

MOSFET; elemental semiconductors; radiation effects; silicon; ON-state irradiation; Si; Si fin-BOX interface; bias conditions; bias configuration; bias dependence; buried oxide; electrostatic potential; fin width; lateral gate control; multiple-gate FinFET; subthreshold-slope degradation; threshold-voltage shift; total dose irradiation; total ionizing dose response; total-dose tolerance; trapped charge buildup; triple-gate MOSFET response; Degradation; FinFETs; Logic gates; MOSFETs; Radiation effects; Fin width; FinFETs; multiple-gate MOSFETs; total dose irradiation; worst-case bias configuration;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2168977

Filename

6081974