Title :
Photoreflectance characterization on the InAlAs-InGaAs heterojunction bipolar transistors
Author :
Chen, Y.H. ; Jan, G.J.
Author_Institution :
Dept. of Phys., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
fDate :
4/1/1997 12:00:00 AM
Abstract :
Characterization of InAlAs-InGaAs heterojunction bipolar transistors (HBT´s) with different spacer thickness inserted between emitter and base grown by molecular beam epitaxy has been performed by photoreflectance (PR) measurement. Analysis of the PR spectra above the fundamental band edge of InAlAs has enabled us to deduce the built-in electric field at the emitter-base junction, so the energy spike at the emitter side can be obtained. The two-dimensional electron gas (2-DEG) accumulated in the spacer channel has also been characterized. Both parameters mentioned above are very important for the performance of HBT´s electrical characteristics
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; photoreflectance; semiconductor device testing; semiconductor heterojunctions; two-dimensional electron gas; InAlAs-InGaAs; built-in electric field; electrical characteristics; emitter side; emitter-base junction; energy spike; fundamental band edge; heterojunction bipolar transistors; molecular beam epitaxy; photoreflectance characterization; photoreflectance measurement; spacer channel; spacer thickness; transistor performance; two-dimensional electron gas; Electric variables; Electron beams; HEMTs; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Molecular beam epitaxial growth; Performance evaluation; Thickness measurement; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
