DocumentCode :
1377013
Title :
Quantum transistors: toward nanoelectronics
Author :
Geppert, L.
Volume :
37
Issue :
9
fYear :
2000
fDate :
9/1/2000 12:00:00 AM
Firstpage :
46
Lastpage :
51
Abstract :
Electrons that tunnel through insulating barriers and hop on and off minuscule dots are shown to be at the heart of future transistor generations
Keywords :
Coulomb blockade; nanotechnology; semiconductor quantum dots; single electron transistors; Coulomb blockade; double-layer tunnelling transistor; electron tunnelling; future transistor generations; insulating barriers; nanoelectronics; quantum dots; quantum transistors; resonant tunnelling diodes; single-electron transistor; Diodes; Electrons; FETs; Heart; Insulation; Nonvolatile memory; Quantum dots; Resonant tunneling devices; Transistors; US Department of Transportation;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/6.866283
Filename :
866283
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1377013
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