• DocumentCode
    1377174
  • Title

    GaInAs/InP pin photodetectors integrated with glass waveguides

  • Author

    Yi-Yan, A. ; Chan, W.K. ; Nguyen, Chinh K. ; Gmitter, T.J. ; Bhat, Ritesh ; Jackel, J.L.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    GaInAs/InP pin photodetectors K+-exchanged channel glass waveguides have been integrated using substrate etch-off, a variation of epitaxial lift-off. Coupling of 1.3 mu m wavelength light from the single mode glass waveguide to the photodetectors is characterised and is found to be in good agreement with calculated values.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; p-i-n diodes; photodetectors; 1.3 micron; GaInAs-InP pin photodiodes; III-V semiconductors; K +-exchanged channel glass waveguides; integrated photodetectors; substrate etch-off;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910056
  • Filename
    60821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377174