Title :
GaInAs/InP pin photodetectors integrated with glass waveguides
Author :
Yi-Yan, A. ; Chan, W.K. ; Nguyen, Chinh K. ; Gmitter, T.J. ; Bhat, Ritesh ; Jackel, J.L.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
GaInAs/InP pin photodetectors K+-exchanged channel glass waveguides have been integrated using substrate etch-off, a variation of epitaxial lift-off. Coupling of 1.3 mu m wavelength light from the single mode glass waveguide to the photodetectors is characterised and is found to be in good agreement with calculated values.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; p-i-n diodes; photodetectors; 1.3 micron; GaInAs-InP pin photodiodes; III-V semiconductors; K +-exchanged channel glass waveguides; integrated photodetectors; substrate etch-off;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910056
