Title :
High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors
Author :
Lin, Wei-Hsun ; Tseng, Chi-Che ; Chao, Kuang-Ping ; Mai, Shu-Cheng ; Kung, Shu-Yen ; Wu, Shug-Yi ; Lin, Shih-Yen ; Wu, Meng-Chyi
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A ten-period GaSb/GaAs quantum-dot infrared photodetector (QDIP) is investigated in this letter. A broad detection window 2-5 μm with peak responses at ~ 3.7 μm is observed. Compared with the 4- to 8-μm detection window of a standard InAs/GaAs QDIP, the detection wavelengths of the GaSb/GaAs QDIP are shifted to the 2- to 5- μm range such that water absorption is avoided. The enhanced normal incident absorption of the GaSb QDIP is attributed to its smaller sizes compared with InAs QDs. Without additional high-bandgap barrier layers, the 200 K spectral response of the simple stacked GaSb/GaAs QDIP has already been observed, which has demonstrated the potential for practical applications of the GaSb/GaAs QDIPs.
Keywords :
III-V semiconductors; gallium arsenide; infrared detectors; photodetectors; quantum dots; GaSb-GaAs; detection wavelengths; high temperature operation; quantum dot infrared photodetectors; Absorption; Gallium arsenide; Ocean temperature; Photoconductivity; Photodetectors; Photonics; Quantum dots; Quantum-dot infrared photodetectors (QDIPs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2091949
