Title :
Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors
Author :
Kim, Yong-Hoon ; Han, Jeong-In ; Park, Sung Kyu
Author_Institution :
Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.
Keywords :
high electron mobility transistors; thin film transistors; tin compounds; zinc compounds; atomic composition ratio; metallic components; operational stability; oxidation potentials; solution-processed thin-film transistors; Circuit stability; Logic gates; Stress; Thin film transistors; Tin; Zinc; Composition ratio; operation stability; solution process; thin-film transistor (TFT); zinc–tin–oxide (ZTO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2171913
