Title :
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
Author :
Tadjer, Marko J. ; Anderson, Travis J. ; Hobart, Karl D. ; Feygelson, Tatyana I. ; Caldwell, Joshua D. ; Eddy, Charles R., Jr. ; Kub, Fritz J. ; Butler, James E. ; Pate, Bradford ; Melngailis, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs exhibited approximately 20% lower device temperature from 0.5 to 9 W/mm dc power device operation. Temperature measurements were performed by Raman thermography and verified by solving the 2-D heat equation within the device structure. NCD-capped HEMTs exhibited 1) improved carrier density NS, sheet resistance RSH; 2) stable Hall mobility μH and threshold voltage VT; and 3) degraded on-state resistance RON , contact resistance RC, transconductance Gm, and breakdown voltage VBR.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; carrier density; contact resistance; diamond; electric breakdown; gallium compounds; high electron mobility transistors; infrared imaging; nanostructured materials; semiconductor thin films; temperature measurement; wide band gap semiconductors; 2D heat equation; AlGaN-GaN; AlGaN/GaN HEMT; C; Hall mobility; NCD thin films; Raman thermography; breakdown voltage; carrier density; contact resistance; heat-spreading capping layer; heat-spreading films; nanocrystalline diamond films; on-state resistance; self-heating; sheet resistance; temperature measurements; transconductance; Aluminum gallium nitride; Diamond-like carbon; Gallium nitride; HEMTs; Heating; MODFETs; Substrates; AlGaN/GaN; heat spreading; nanocrystalline diamond; power switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2171031
