• DocumentCode
    1377348
  • Title

    AlGaInP red lasers with nearly round far field pattern

  • Author

    Anayama, C. ; Okada, N. ; Sugiura, K. ; Furuya, A. ; Tanahashi, T.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    34
  • Issue
    6
  • fYear
    1998
  • fDate
    3/19/1998 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    552
  • Abstract
    An AlGaInP 650 nm laser with nearly round FFP has been fabricated using the S3-laser structure. Both transverse and vertical beam divergences are almost 17°. The aspect ratio is nearly 1. The laser has a low threshold current of 25 mA and operates stably for more than 500h at 60°C and 10 mW
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser stability; laser transitions; semiconductor lasers; 10 mW; 25 mA; 500 hour; 60 C; 650 nm; AlGaInP; AlGaInP red lasers; S3-laser structure; far field pattern; low threshold current; transverse beam divergence; vertical beam divergence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980375
  • Filename
    674280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377348