Title :
AlGaInP red lasers with nearly round far field pattern
Author :
Anayama, C. ; Okada, N. ; Sugiura, K. ; Furuya, A. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/19/1998 12:00:00 AM
Abstract :
An AlGaInP 650 nm laser with nearly round FFP has been fabricated using the S3-laser structure. Both transverse and vertical beam divergences are almost 17°. The aspect ratio is nearly 1. The laser has a low threshold current of 25 mA and operates stably for more than 500h at 60°C and 10 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser stability; laser transitions; semiconductor lasers; 10 mW; 25 mA; 500 hour; 60 C; 650 nm; AlGaInP; AlGaInP red lasers; S3-laser structure; far field pattern; low threshold current; transverse beam divergence; vertical beam divergence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980375
