DocumentCode
1377362
Title
CW operation of a diode cascade InGaAs quantum well VCSEL
Author
Schmid, W. ; Wiedenmann, D. ; Grabherr, M. ; Jäger, R. ; Michalzik, R. ; Ebeling, K.J.
Author_Institution
Dept. of Opto-Electron., Ulm Univ., Germany
Volume
34
Issue
6
fYear
1998
fDate
3/19/1998 12:00:00 AM
Firstpage
553
Lastpage
555
Abstract
A diode cascade vertical cavity surface emitting laser with two active p-n junctions connected in series is demonstrated. Operating in CW mode up to 175 K. Differential quantum efficiency clearly exceeds 100% and a maximum output power of 40 mW is obtained
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 120 percent; 175 K; 40 mW; CW operation; InGaAs; InGaAs quantum well VCSEL; active p-n junctions; diode cascade QW VCSEL; semiconductor laser; series connected junctions; surface emitting laser; vertical cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980414
Filename
674282
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