Title :
High efficiency 0.5 W/A at 85°C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate
Author :
Nakamura, T. ; Tsuruoka, K. ; Uda, A. ; Fukushima, Kazuki ; Torikai, T.
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Shiga
fDate :
3/19/1998 12:00:00 AM
Abstract :
An efficiency of 0.5 W/A, the highest ever reported conventional quaternary InGaAsP materials, and maximum output power of 40mW at 85°C were realised for 1.3 μm strained multiquantum well (MQW) lasers entirely grown by MOVPE on a p-InP substrate
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; 40 mW; 85 C; InGaAsP; InP; MOVPE; multiquantum well lasers; p-InP substrate; quaternary InGaAsP material; strained MQW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980440
