DocumentCode
1377376
Title
High efficiency 0.5 W/A at 85°C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate
Author
Nakamura, T. ; Tsuruoka, K. ; Uda, A. ; Fukushima, Kazuki ; Torikai, T.
Author_Institution
Kansai Electron. Res. Lab., NEC Corp., Shiga
Volume
34
Issue
6
fYear
1998
fDate
3/19/1998 12:00:00 AM
Firstpage
556
Lastpage
558
Abstract
An efficiency of 0.5 W/A, the highest ever reported conventional quaternary InGaAsP materials, and maximum output power of 40mW at 85°C were realised for 1.3 μm strained multiquantum well (MQW) lasers entirely grown by MOVPE on a p-InP substrate
Keywords
gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; 40 mW; 85 C; InGaAsP; InP; MOVPE; multiquantum well lasers; p-InP substrate; quaternary InGaAsP material; strained MQW lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980440
Filename
674284
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