Title :
High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers
Author :
Wang, Xiaokun ; Cooper, James A.
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper, we describe a process for fabricating high-voltage n-channel double-diffused metal-oxide-semiconductor insulated gate bipolar transistors (IGBTs) on free-standing 4H silicon carbide (SiC) epilayers. In this process, all critical layers are epitaxially grown in a continuous sequence. The substrate is then removed, and device fabrication takes place on the carbon face of a free-standing epilayer having a total thickness of about 180 ¿m. For a drift layer with doping and thickness values capable of blocking 20 kV, the n-channel IGBT carries 27.3-A/cm2 current at a power dissipation of 300 W/cm2, with a differential on-resistance of 177 m¿·cm2. To our knowledge, this is the first detailed report of device fabrication on free-standing SiC epilayers.
Keywords :
MIS devices; high-voltage engineering; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; IGBT; SiC; device fabrication; double-diffused metal-oxide-semiconductor; drift layer; free-standing 4H silicon carbide epilayers; high-voltage n-channel insulated gate bipolar transistors; power dissipation; size 180 mum; voltage 20 kV; Doping; Fabrication; Immune system; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power dissipation; Silicon carbide; Substrates; Voltage; Free-standing epilayer; high voltage; insulated gate bipolar transistor (IGBT); silicon carbide (SiC);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2037379
