• DocumentCode
    1377518
  • Title

    First DFB GRIN-SCH GaInAs/AlGaInAs 1.55 mu m MBE MQW active layer buried ridge structure lasers

  • Author

    Blez, M. ; Kazmierski, C. ; Quillec, M. ; Robein, D. ; Allovon, M. ; Sermage, B.

  • Author_Institution
    Lab. de Bagneux, France
  • Volume
    27
  • Issue
    1
  • fYear
    1991
  • Firstpage
    93
  • Lastpage
    95
  • Abstract
    A report is made on the realisation for the first time of DFB GaInAs/AlGaInAs MQW active layer lasers with good static, dynamic and spectral performances; threshold currents as low as 13 mA are reported, and a maximum resonant frequency of 9.4 GHz is observed at only 6.6 mW power output. These values compare fairly well to those obtained with similar processes in the InGaAsP system and can probably be improved by a further optimisation of the structure.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; semiconductor junction lasers; 1.55 micron; 13 mA; 6.6 mW; 9.4 GHz; DFB GRIN-SCH; GaInAs-AlGaInAs laser; III-V semiconductors; MBE MQW active layer; buried ridge structure lasers; maximum resonant frequency; power output; semiconductor lasers; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910059
  • Filename
    60824
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377518