Title :
Advantages of Al-free GaInP/InGaAs PHEMTs for power applications
Author :
Chertouk, M. ; Bürkner, S. ; Bachem, K. ; Pletschen, W. ; Kraus, S. ; Braunstein, J. ; Trankle, G.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
3/19/1998 12:00:00 AM
Abstract :
The performance and temperature stability of Al-free GaInAs/GaAs PHEMTs with GaInP as a Schottky barrier is reported. GaInP/GaInAs/GaAs PHEMTs with a 1μm gate length show an fmax value of 76 GHz with a maximum drain current of 570 mA/mm and a drain-source breakdown voltage of 16V. Moreover, the first results on short gate length devices (0.15 μm) yield fT and fmax values of 106 and 203 GHz, respectively. In this case, the drain-source breakdown voltage is as high as 8 V. These results demonstrate the great potential of GaInP/GaInAs PHEMTs for power applications
Keywords :
Schottky barriers; electric breakdown; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor device reliability; 0.15 micron; 106 GHz; 16 V; 203 GHz; 76 GHz; 8 V; GaInP-InGaAs; Schottky barrier; drain current; drain-source breakdown voltage; fT values; fmax values; gate length; power PHEMTs; temperature stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980436
