• DocumentCode
    1377537
  • Title

    AlN/GaN insulated gate heterostructure FET with regrown n+ GaN ohmic contact

  • Author

    Kawai, H. ; Hara, M. ; Nakamura, F. ; Imanaga, S.

  • Author_Institution
    Res. Center, Sony Corp., Yokohama, Japan
  • Volume
    34
  • Issue
    6
  • fYear
    1998
  • fDate
    3/19/1998 12:00:00 AM
  • Firstpage
    592
  • Lastpage
    593
  • Abstract
    An AlN/GaN insulated gate heterostructure FET is presented. An n +GaN channel is placed on a thick Al0.15Ga0.85N layer and is covered by a 4 nm thick AlN insulator layer. The FET has a threshold voltage of near 0 V. A G m of 220 mS/mm for a 1.4 μm gate length was obtained
  • Keywords
    III-V semiconductors; MISFET; aluminium compounds; gallium compounds; ohmic contacts; 1.4 micron; 4 nm; AlN-GaN; gate length; insulated gate heterostructure FET; regrown ohmic contact; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980464
  • Filename
    674308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377537