• DocumentCode
    1377543
  • Title

    An In0.5(Al0.3Ga0.7)0.5P/In 0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2 V operation

  • Author

    Wang, Y.C. ; Kuo, J.M. ; Lothian, J.R. ; Ren, F. ; Tsai, H.S. ; Weiner, J.S. ; Lin, J. ; Tate, A. ; Chen, Y.K. ; Mayo, W.E.

  • Author_Institution
    Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    34
  • Issue
    6
  • fYear
    1998
  • fDate
    3/19/1998 12:00:00 AM
  • Firstpage
    594
  • Lastpage
    595
  • Abstract
    The authors report the first power performance of In0.5(Al0.3Ga0.7)0.5P/In 0.2Ga0.8As double-heterojunction pseudomorphic high electron mobility transistors (DH-PHEMTs) for portable wireless power applications. At 850 MHz, a 1 μm×5mm device demonstrated a maximum power-added efficiency (PAE) of 65.2 and 68.2% under 1.2 and 2 V operation, respectively. At 1.9 GHz, a 53% peak PAE, a 8.3 dB linear power gain, and a 25 dBm saturated output power were obtained from the same device at a drain bias of 2V
  • Keywords
    UHF field effect transistors; leakage currents; personal communication networks; power HEMT; radio transmitters; 1 micron; 1.2 V; 1.9 GHz; 2 V; 53 percent; 65.2 percent; 68.2 percent; 8.3 dB; 850 MHz; DH-PHEMTs; In0.5(Al0.3Ga0.7)0.5 P-In0.2Ga0.8As; UHF power FETs; drain bias; linear power gain; portable wireless power applications; power HEMT; power-added efficiency; saturated output power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980430
  • Filename
    674309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377543