Single 3.4 V operation power heterojunction FET with 60% efficiency for personal digital cellular phones

Author

Bito, Y. ; Iwata, N. ; Tomita, M.

Author_Institution

Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan

Volume

34

Issue

6

fYear

1998

fDate

3/19/1998 12:00:00 AM

Firstpage

600

Lastpage

601

Abstract

The authors describe the 950 MHz power performance of a double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET (HJFET), operated at a single 3.4 V bias voltage. The developed 1.0 μm gate-length HJFET exhibited an on-resistance of 2.3 Ω·mm and a threshold voltage of -0.25 V. While operating with a single 3.4 V bias supply, a 16 mm gate-width HJFET exhibited an output power of 1.42 W (31.5 dBm) and 60.1% power-added efficiency with an adjacent channel leakage power of -48.2 dBc at an off-centre frequency of 50 kHz. The developed HJFET is promising for single-bias voltage operation power modules of personal digital cellular phones with a single Li-ion battery supply

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; cellular radio; digital radio; gallium arsenide; indium compounds; power field effect transistors; -0.25 V; 1.0 micron; 1.42 W; 16 mm; 3.4 V; 50 kHz; 60 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; adjacent channel leakage power; bias voltage; off-centre frequency; on-resistance; output power; personal digital cellular phones; power heterojunction FET; single-bias voltage operation; threshold voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980402

Filename

674313