Mid-Infrared Optoelectronics. Materials and Devices

Volume

144

Issue

5

fYear

1997

fDate

10/1/1997 12:00:00 AM

Abstract

There is increasing interest in mid-IR optoelectronic materials and devices, due to their huge potential in applications such as optical gas sensor instrumentation; thermal imaging; remote sensing; environmental and process monitoring; telecommunications; laser surgery; and photomedicine. In particular the problem of Auger recombination, and how it can be effectively overcome, remains a significant issue. A wide range of topics is covered here, including contributions on: strained InGaAs quantum well emitters, free-electron laser studies of Auger recombination, InAsSb strained layer superlattices, optical waveguide properties of quantum cascade lasers, as well as complimentary work on InGaAs photodetectors and also on CdHgTe staring arrays

Keywords

Auger effect; electron-hole recombination; infrared detectors; laser beam applications; light emitting diodes; optical materials; optoelectronic devices; quantum well lasers; semiconductor materials; semiconductor superlattices; waveguide lasers; Auger recombination; CdHgTe staring arrays; InAsSb strained layer superlattices; InGaAs photodetectors; environmental monitoring; free-electron laser studies; laser surgery; mid-IR optoelectronic devices; mid-IR optoelectronic materials; optical gas sensor instrumentation; optical waveguide properties; photomedicine; process monitoring; quantum cascade lasers; remote sensing; strained InGaAs quantum well emitters; telecommunications; thermal imaging;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

Filename

674324