Title :
Integration of Nanoelectromechanical Relays With Silicon nMOS
Author :
Chong, Soogine ; Lee, Byoungil ; Mitra, Subhasish ; Howe, Roger T. ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Electrostatically actuated nanoelectromechanical (NEM) relays are integrated with silicon nMOS devices. An nMOSFET successfully drives a NEM relay with the MOSFET serving as a pass transistor to control the state of the relay. Silicon MOSFET-NEM relay integration opens up the possibility for applications, where the zero off-state leakage, the sharp on/off transition, and/or the hysteresis of the NEM relay can be used to complement the capabilities of CMOS.
Keywords :
CMOS integrated circuits; MOSFET; nanoelectromechanical devices; silicon; CMOS integrated circuits; electrostatically actuated nanoelectromechanical relays; nMOSFET; off-state leakage; pass transistor; silicon nMOS; Awards activities; CMOS integrated circuits; Educational institutions; Electrical engineering; MOS devices; Relays; Silicon; MOSFETs; Microelectromechanical devices; nanotechnology; relay;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2172946
