DocumentCode
1377725
Title
Theory of quantum well IR photodetectors with tunnelling electron injection
Author
Ryzhii, V.
Author_Institution
Comput. Solid State Phys. Lab., Aizu Univ., Japan
Volume
144
Issue
5
fYear
1997
fDate
10/1/1997 12:00:00 AM
Firstpage
343
Lastpage
349
Abstract
A simple analytical model of quantum-well infrared photodetectors (QWIPs) utilising intersubband electron transitions and tunnelling injection of electrons is developed. It is shown that the dark current and the responsivity as functions of the QWIP parameters, including the number of QWs, are expressed by means of solutions of a transcendent equation. This equation is valid for a wide range of parameters and conditions where QWIPs can exhibit effective operation. Explicit formulae for the dark current and the responsivity are obtained in some important cases. Nonlinear effects in the QWIP operation are considered and threshold values of bias voltage and intensity of infrared radiation are estimated
Keywords
dark conductivity; infrared detectors; nonlinear optics; photodetectors; semiconductor device models; tunnelling; analytical model; dark current; intersubband electron transitions; nonlinear optics; quantum well IR photodetectors; quantum-well infrared photodetectors; responsivity; transcendent equation solution; tunnelling electron injection; tunnelling injection;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19971215
Filename
674339
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