• DocumentCode
    1377725
  • Title

    Theory of quantum well IR photodetectors with tunnelling electron injection

  • Author

    Ryzhii, V.

  • Author_Institution
    Comput. Solid State Phys. Lab., Aizu Univ., Japan
  • Volume
    144
  • Issue
    5
  • fYear
    1997
  • fDate
    10/1/1997 12:00:00 AM
  • Firstpage
    343
  • Lastpage
    349
  • Abstract
    A simple analytical model of quantum-well infrared photodetectors (QWIPs) utilising intersubband electron transitions and tunnelling injection of electrons is developed. It is shown that the dark current and the responsivity as functions of the QWIP parameters, including the number of QWs, are expressed by means of solutions of a transcendent equation. This equation is valid for a wide range of parameters and conditions where QWIPs can exhibit effective operation. Explicit formulae for the dark current and the responsivity are obtained in some important cases. Nonlinear effects in the QWIP operation are considered and threshold values of bias voltage and intensity of infrared radiation are estimated
  • Keywords
    dark conductivity; infrared detectors; nonlinear optics; photodetectors; semiconductor device models; tunnelling; analytical model; dark current; intersubband electron transitions; nonlinear optics; quantum well IR photodetectors; quantum-well infrared photodetectors; responsivity; transcendent equation solution; tunnelling electron injection; tunnelling injection;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19971215
  • Filename
    674339