DocumentCode
1377738
Title
2.5 μm light-emitting diodes in InAs0.36Sb0.20 P0.44/InAs for HF detection
Author
Krier, A. ; Mao, Y.
Author_Institution
Sch. of Phys. & Chem., Lancaster Univ., UK
Volume
144
Issue
5
fYear
1997
fDate
10/1/1997 12:00:00 AM
Firstpage
355
Lastpage
359
Abstract
The quaternary alloy InAs1-xSbxPy, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of pollutant/nuisance gases in the 2-5 μm region of the spectrum. The authors report on the growth of lnAs0.36Sb0.20P0.44 by liquid phase epitaxy (LPE) onto InAs substrates. The material exhibits good luminescence efficiency and has excellent optical characteristics, making it suitable for use in optoelectronic devices. Surface-emitting LEDs were fabricated and efficient room temperature infrared emission at 2.5 μm was obtained from homojunction p-i-n diodes. These sources can be effectively used as the basis of an optical sensor for the environmental monitoring of HF gas at 2.5 μm in various applications
Keywords
III-V semiconductors; air pollution measurement; gas sensors; indium compounds; infrared sources; light emitting diodes; liquid phase epitaxial growth; optical materials; optical sensors; semiconductor growth; spectrochemical analysis; 2 to 5 mum; 2.5 mum; HF; HF detection; HF gas; IR detectors; InAs substrates; InAs0.36Sb0.20P0.44-InAs; InAs0.36Sb0.20P0.44/InAs; InAs1-xSbxPy; LPE; environmental monitoring; good luminescence efficiency; homojunction p-i-n diodes; infrared light sources; lattice-matched; light-emitting diodes; liquid phase epitaxy; optical characteristics; optical sensor; optoelectronic devices; pollutant gas detection; quaternary alloy; surface-emitting LEDs;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19971390
Filename
674341
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