DocumentCode :
1377823
Title :
Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs
Author :
Grassi, Roberto ; Gnudi, Antonio ; Gnani, Elena ; Reggiani, Susanna ; Baccarani, Giorgio
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Univ. of Bologna, Bologna, Italy
Volume :
10
Issue :
3
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
371
Lastpage :
378
Abstract :
A mode space (MS) tight binding approach for the simulation of armchair graphene nanoribbon FETs is discussed. It makes use of slab-dependent modes and a novel criterion for mode selection, going beyond the one based on the lowest energy subbands. For ideal ribbons, we show that by splitting the modes into decoupled groups, the new method provides results almost identical to the real space (RS) with a speedup of more than one order of magnitude. Even in the presence of edge roughness, which tends to couple the modes, the MS approach still offers a sizable computational advantage with respect to the RS, while retaining a good accuracy.
Keywords :
field effect transistors; graphene; nanostructured materials; tight-binding calculations; C; armchair graphene nanoribbon FET; edge roughness; energy subbands; mode selection; mode space tight binding; mode splitting; slab-dependent modes; Art; Automotive materials; Computational geometry; Effective mass; Electrons; FETs; Iron; Nanoscale devices; Permission; Slabs; Graphene nanoribbon (GNR) FETs; mode-space (MS) approach; nonequilibrium Green’s functions (NEGF); tight binding (TB) Hamiltonian;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2009.2038154
Filename :
5373922
Link To Document :
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