DocumentCode :
1378116
Title :
High Characteristic Temperature of Highly Stacked Quantum-Dot Laser for 1.55- 
m Band
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Volume :
22
Issue :
2
fYear :
2010
Firstpage :
103
Lastpage :
105
Abstract :
We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
Keywords :
III-V semiconductors; ground states; indium compounds; laser modes; quantum dot lasers; InAs; broad-area laser diodes; ground-state lasing; high characteristic temperature laser; high quantum dot density; highly stacked quantum-dot laser; pulsed mode; strain compensation; temperature 113 K; temperature 20 °C to 80 °C; wavelength 1.55 μm; wavelength 1529 nm; Characteristic temperature; quantum dot (QD); stacking strain compensation;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2035821
Filename :
5373966
Link To Document :
