Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy

Author

Tsang, W.T. ; Yang, Lei ; Wu, Ming C. ; Chen, Y.K.

Author_Institution

AT+T Bell Labs., Murray Hill, NJ, USA

Volume

27

Issue

1

fYear

1991

Firstpage

3

Lastpage

5

Abstract

Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective area epitaxy with no deposition over the SiO₂ masks has been routinely obtained with excellent epilayer morphology. Uniform coverage was obtained for regrowth over etched mesas to form buried heterostructures. For growth over etch channels, very unique growth characteristics were obtained. Buried crescent stripes similar to those formed by liquid-phase epitaxy inside channels were also obtained by CBE. These growth characteristics demonstrated the unique of CBE for diode laser fabrication.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductor superlattices; GaInAs-InP; GaInAsP-InP; SiO₂; SiO₂ masks; buried crescent stripes; buried heterostructures; chemical beam epitaxy; diode laser fabrication; epilayer morphology; epitaxial growth; etch channels; etched mesas; patterned substrates; regrowth; selective area epitaxy; superlattice;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910003

Filename

60831