1.3 μm spot-size converter integrated ASM-BH LDs with low operating current and high coupling efficiency

Author

Furushima, Yasuo ; Sakata, Yuji ; Sasaki, Yutaka ; Yamazaki, Hiroshi ; Kudo, K. ; Inomoto, Y. ; Sasaki, T.

Author_Institution

Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki

Volume

34

Issue

8

fYear

1998

fDate

4/16/1998 12:00:00 AM

Firstpage

767

Lastpage

768

Abstract

High-performance 1.3 μm spot-size-converter integrated laser diodes with a pnpn current blocking structure were fabricated using the all-selective MOVPE technique. The active layer and thickness-tapered waveguide were simultaneously and directly grown by narrow-stripe selective MOVPE. Superior lasing characteristics, such as a low threshold current of 18.ImA at 85°C and a low operating current of 59.5 mA for 10 mW output power at 85°C, and high lens-free coupling efficiency of -2.8 dB to a singlemode fibre, were achieved

Keywords

infrared sources; laser transitions; optical fabrication; optical transmitters; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 mum; 10 mW; 18.1 mA; 59.9 mA; 85 C; active layer; all-selective MOVPE technique; high coupling efficiency; high lens-free coupling efficiency; lasing characteristics; low operating current; low threshold current; mW output power; narrow-stripe selective MOVPE; optical fabrication; optical fibre coupling; pnpn current blocking structure; singlemode fibre; spot-size converter integrated ASM-BH LDs; spot-size-converter integrated laser diodes; thickness-tapered waveguide;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980681

Filename

674910