Title :
1.55 μm DFB lasers incorporating etched lateral taper spot size converters
Author :
Williams, P.J. ; Robbins, D.J. ; Fine, J. ; Griffith, I. ; Reid, D.C.J.
Author_Institution :
GEC Marconi Mater. Technol. Ltd., Towcester, UK
fDate :
4/16/1998 12:00:00 AM
Abstract :
The authors describe the fabrication and characterisation of 1.55 μm wavelength DFB laser diodes with integrated, etched lateral taper, spot size converters. The buried ridge structure lasers were fabricated by conventional two-stage growth and processing techniques. Typical threshold currents of 10-15 mA were achieved with output powers up to 25 mW at 100 mA drive and with high singlemode yield. Coupling efficiencies to singlemode fibre were ~40% with positional tolerances of approximately ±2 μm at the -1 dB power point
Keywords :
diffraction gratings; distributed feedback lasers; etching; infrared sources; integrated optics; laser modes; laser transitions; optical fabrication; optical fibre couplers; optical transmitters; semiconductor lasers; 1.55 mum; 10 to 15 mA; 100 mA; 25 mW; 40 percent; DFB laser diodes; DFB lasers; buried ridge structure laser fabrication; coupling efficiencies; etched lateral taper; etched lateral taper spot size converters; high singlemode yield; optical transmitters; output powers; positional tolerances; processing techniques; singlemode fibre coupling; spot size converters; threshold currents; two-stage growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980574
