Title :
1.55 μm transmission at 2.5 Gbit/s over 1102 km of NDSF using discrete and monolithically integrated InGaAsP-InP Mach-Zehnder modulator and DFB laser
Author :
Adams, D.M. ; Rolland, C. ; Fekecs, A. ; McGhan, D. ; Somani, A. ; Bradshaw, S. ; Poirier, M. ; Dupont, E. ; Cremer, E. ; Anderson, K.
Author_Institution :
Adv. Technol, Nortel, Ottawa, Ont., Canada
fDate :
4/16/1998 12:00:00 AM
Abstract :
Link performances at 25 Gbit/s for a packaged, InGaAsP-based, monolithically integrated Mach-Zehnder modulator and DFB laser, and a co-packaged discrete Mach-Zehnder modulator and DFB laser, are reported. Both modulators feature a switching voltage of ~2V, and an on-chip absorber for optical power adjustment of up to 15 dB. Negative dispersion penalties at 1.55 μm for >1000 km of nondispersion shifted fibre (NDSF) are achieved with both modules
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; modules; optical communication equipment; optical transmitters; semiconductor device packaging; semiconductor lasers; 1.55 mum; 1102 km; 2 V; 2.5 Gbit/s; DFB laser; InGaAsP-InP; co-packaged discrete Mach-Zehnder modulator; link performances; modules; monolithically integrated InGaAsP-InP Mach-Zehnder modulator; negative dispersion penalties; nondispersion shifted fibre; on-chip absorber; optical power adjustment; packaged InGaAsP-based monolithically integrated Mach-Zehnder modulator; switching voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980551
