Low crosstalk and highly reliable 12 element 1.3 μm AlGalnAs/InP laser arrays

Author

Chia-Chien Lin ; Meng-Chyi Wu ; Wei-Han Wang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu

Volume

34

Issue

8

fYear

1998

fDate

4/16/1998 12:00:00 AM

Firstpage

776

Lastpage

777

Abstract

Monolithic 12 element 1.3 μm AlGaInAs-InP strained multi-quantum well laser arrays have been fabricated. The laser diodes on the array exhibit excellent uniformity with standard deviations of 0.008 mA, 0.011 W/A and 0.6 nm for threshold current, slope efficiency and lasing wavelength, respectively, at 20°C. In addition, a low crosstalk of -2.2 dB is achieved as other elements are simultaneously biased at 70 mA. A lifetime of >30 years is estimated for the lasers operating at 10 mW and 85°C

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; life testing; optical crosstalk; optical transmitters; semiconductor device reliability; semiconductor device testing; semiconductor laser arrays; 1.3 mum; 10 mW; 12 element 1.3 μm AlGalnAs/InP laser arrays; 20 C; 30 y; 70 mA; 85 C; AlGaInAs-InP; AlGaInAs-InP strained multi-quantum well laser arrays; highly reliable; laser diodes; lasing wavelength; lifetime; low crosstalk; optical transmitters; slope efficiency; standard deviations; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980561

Filename

674916