DocumentCode :
1378179
Title :
Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ=1020 nm) ridge waveguide laser diodes
Author :
Beister, G. ; Bugge, F. ; Erbert, G. ; Maege, J. ; Ressel, P. ; Sebastian, J. ; Thies, A. ; Wenzel, H.
Author_Institution :
Ferdinand-Bruun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume :
34
Issue :
8
fYear :
1998
fDate :
4/16/1998 12:00:00 AM
Firstpage :
778
Lastpage :
779
Abstract :
3.35 mm long InGaAs-GaAs-AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with ZnSe-Al2O3 . Remarkable facet stability was obtained, confirmed during aging at 40°C and 300 mW emission power, or at 70°C and 250 mW
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser reliability; laser stability; life testing; quantum well lasers; semiconductor device testing; waveguide lasers; 1020 mm; 250 mW; 350 mW; 40 C; 70 C; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs ridge waveguide lasers; InGaAs/AlGaAs ridge waveguide laser diodes; ZnSe-Al2O3; aging; emission near field; facet stability; high reliability; mW emission power; monomode emission;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980581
Filename :
674917
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1378179
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