• DocumentCode
    1378179
  • Title

    Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ=1020 nm) ridge waveguide laser diodes

  • Author

    Beister, G. ; Bugge, F. ; Erbert, G. ; Maege, J. ; Ressel, P. ; Sebastian, J. ; Thies, A. ; Wenzel, H.

  • Author_Institution
    Ferdinand-Bruun-Inst. fur Hochstfrequenztech., Berlin, Germany
  • Volume
    34
  • Issue
    8
  • fYear
    1998
  • fDate
    4/16/1998 12:00:00 AM
  • Firstpage
    778
  • Lastpage
    779
  • Abstract
    3.35 mm long InGaAs-GaAs-AlGaAs ridge waveguide lasers emitting at 1020 nm showed monomode emission up to 350 mW. By widening the emission near field and protecting the facets with ZnSe-Al2O3 . Remarkable facet stability was obtained, confirmed during aging at 40°C and 300 mW emission power, or at 70°C and 250 mW
  • Keywords
    III-V semiconductors; ageing; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser reliability; laser stability; life testing; quantum well lasers; semiconductor device testing; waveguide lasers; 1020 mm; 250 mW; 350 mW; 40 C; 70 C; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs ridge waveguide lasers; InGaAs/AlGaAs ridge waveguide laser diodes; ZnSe-Al2O3; aging; emission near field; facet stability; high reliability; mW emission power; monomode emission;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980581
  • Filename
    674917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378179