DocumentCode :
1378307
Title :
Simple measurement of carrier induced refractive-index change in InGaAsP PIN ridge waveguide structures
Author :
Schraud, G. ; Müller, G. ; Stoll, L. ; Wolff, U.
Author_Institution :
Tech. Univ., Munich, West Germany
Volume :
27
Issue :
4
fYear :
1991
Firstpage :
297
Lastpage :
298
Abstract :
The carrier induced refractive-index change Delta n in integrated InGaAsP 1.30 mu m interferometer structures is evaluated by 1.55 mu m transmission measurements. At carrier concentrations N from 8*1016/cm3 to 3*1018/cm3 a value of Delta n/N=-1*10-20 cm3 is obtained. A good agreement of the experimental results with theoretical predictions on bandfilling, plasma effect and bandgap shrinkage is demonstrated.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; integrated optics; light interferometers; optical waveguides; refractive index; 1.3 micron; 1.55 micron; InGaAsP; PIN ridge waveguide structures; bandfilling; bandgap shrinkage; carrier concentrations; carrier induced refractive-index change; integrated interferometer structures; p-i-n structures; plasma effect; transmission measurements;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910187
Filename :
86718
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1378307
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