Title :
Charge pumping investigations on parasitic regions in polysilicon TFT
Author :
Kim, Ohyun ; Kim, Klee-Jong
Author_Institution :
Pohang Univ. of Sci. & Technol., Kyungbuk, South Korea
fDate :
4/16/1998 12:00:00 AM
Abstract :
By comparing with the static I-V characteristics in polysilicon TFTs, it was found that the charge pumping current has four components that arise from the main channel, the channel edge and two overlap regions near the n+ and p+ contacts. ECR hydrogenation effectively passivates the trap states in the overlap regions
Keywords :
MOSFET; elemental semiconductors; passivation; silicon; thin film transistors; ECR hydrogenation; Si; channel edge; charge pumping current; main channel; overlap regions; parasitic regions; passivation; polysilicon TFT; static I-V characteristics; trap states;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980527
