Device characteristics of scaled GaN/AlGaN MODFETs

Author

Nguyen, N.X. ; Nguyen, Cam ; Grider, D.E.

Author_Institution

HRL Labs., LLC, Malibu, CA

Volume

34

Issue

8

fYear

1998

fDate

4/16/1998 12:00:00 AM

Firstpage

811

Lastpage

812

Abstract

GaN/AlGaN MODFETs with gate-widths varying from 0.2 to 1 mm have been successfully fabricated, and the device characteristics have been systematically investigated. The epitaxial layers were grown directly on sapphire substrates by RF-assisted MBE. Thick-airbridge technology was employed in the fabrication of large gate periphery devices. Very stable and reproducible device characteristics have been obtained for devices with a total gate width of up to 1 mm. These device results demonstrated the excellent potential of GaN-based FETs as power cells for practical microwave applications

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor epitaxial layers; stability; wide band gap semiconductors; 0.2 to 1 mm; Al₂O₃; GaN-AlGaN; GaN-based FETs; RF-assisted MBE; device characteristics; epitaxial layers; fabrication; large gate periphery devices; microwave applications; power devices; sapphire substrates; scaled GaN/AlGaN MODFETs; thick-airbridge technology;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980576

Filename

674940