• DocumentCode
    1378434
  • Title

    Electrolytic processes for etching and metal deposition towards nanometre quantum structures

  • Author

    Grub, A. ; Richter, Rudolf ; Hartnagel, H.L.

  • Author_Institution
    Tech. Hochschule, Darmstadt, West Germany
  • Volume
    27
  • Issue
    4
  • fYear
    1991
  • Firstpage
    306
  • Lastpage
    307
  • Abstract
    New processes of etching and metal deposition in the submicron range have been developed by using electrolytic solutions. Etching of towers and ridges with dimensions of less than 300 nm out of a GaAs substrate is achieved. Similarly, submicron metallisation with dots and lines of less than 100 nm in size is demonstrated by direct electrolytical writing using an STM-type sharp needle point. Both processes appear to be promising for the realisation and further development of mesoscopic devices.
  • Keywords
    III-V semiconductors; electrodeposition; etching; gallium arsenide; integrated circuit technology; metallisation; semiconductor technology; substrates; GaAs substrate; STM-type sharp needle point; direct electrolytical writing; electrolytic solutions; etching; mesoscopic devices; metal deposition; nanometre quantum structures; nanotechnology; ridges; submicron metallisation; submicron range; towers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910193
  • Filename
    86724