DocumentCode
1378434
Title
Electrolytic processes for etching and metal deposition towards nanometre quantum structures
Author
Grub, A. ; Richter, Rudolf ; Hartnagel, H.L.
Author_Institution
Tech. Hochschule, Darmstadt, West Germany
Volume
27
Issue
4
fYear
1991
Firstpage
306
Lastpage
307
Abstract
New processes of etching and metal deposition in the submicron range have been developed by using electrolytic solutions. Etching of towers and ridges with dimensions of less than 300 nm out of a GaAs substrate is achieved. Similarly, submicron metallisation with dots and lines of less than 100 nm in size is demonstrated by direct electrolytical writing using an STM-type sharp needle point. Both processes appear to be promising for the realisation and further development of mesoscopic devices.
Keywords
III-V semiconductors; electrodeposition; etching; gallium arsenide; integrated circuit technology; metallisation; semiconductor technology; substrates; GaAs substrate; STM-type sharp needle point; direct electrolytical writing; electrolytic solutions; etching; mesoscopic devices; metal deposition; nanometre quantum structures; nanotechnology; ridges; submicron metallisation; submicron range; towers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910193
Filename
86724
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