DocumentCode :
1378561
Title :
Guided-wave laser based on erbium-doped silica planar lightwave circuit
Author :
Kitagawa, T. ; Hattori, K. ; Shimizu, M. ; Ohmori, Y. ; Kobayashi, M.
Author_Institution :
NTT, Opto-Electron. Labs., Ibaraki, Japan
Volume :
27
Issue :
4
fYear :
1991
Firstpage :
334
Lastpage :
335
Abstract :
The Er-doped silica guided-wave laser operating around 1.6 mu m was realised using a low-scattering-loss planar lightwave circuit with an Er-doped silica core which was fabricated by flame hydrolysis deposition and reactive ion etching techniques on an Si substrate. CW lasing was achieved successfully with an incident threshold power of 49 mW for pumping at 0.98 mu m.
Keywords :
erbium; fibre lasers; optical workshop techniques; silicon compounds; sputter etching; 0.98 micron; 1.6 micron; 49 mW; CW lasing; Er 3+:silica; Si; Si-SiO 2:Er 3+; flame hydrolysis deposition; incident threshold power; low-scattering-loss planar lightwave circuit; reactive ion etching techniques;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910211
Filename :
86742
Link To Document :
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