Title :
Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers
Author :
Whiteaway, J.E.A. ; Thompson, G.H.B. ; Greene, P.D. ; Glew, R.W.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
The threshold current density of InGaAs/InGaAlAs/InP SCH MQW lasers with various cavity lengths and numbers of wells has been measured. The gain of each well depends logarithmically on current density from 200 to at least 2000 A cm-2. Curves are presented for optimising the number of wells. Comparisons are made with GaAs/AlGaAs MQW lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; InGaAs-InGaAlAs-InP; SCH MQW lasers; cavity lengths; current density; logarithmic gain/current-density characteristic; multi-quantum-well separate-confinement-heterostructure lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910215
