• DocumentCode
    1378584
  • Title

    Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasers

  • Author

    Whiteaway, J.E.A. ; Thompson, G.H.B. ; Greene, P.D. ; Glew, R.W.

  • Author_Institution
    STC Technol. Ltd., Harlow, UK
  • Volume
    27
  • Issue
    4
  • fYear
    1991
  • Firstpage
    340
  • Lastpage
    342
  • Abstract
    The threshold current density of InGaAs/InGaAlAs/InP SCH MQW lasers with various cavity lengths and numbers of wells has been measured. The gain of each well depends logarithmically on current density from 200 to at least 2000 A cm-2. Curves are presented for optimising the number of wells. Comparisons are made with GaAs/AlGaAs MQW lasers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; InGaAs-InGaAlAs-InP; SCH MQW lasers; cavity lengths; current density; logarithmic gain/current-density characteristic; multi-quantum-well separate-confinement-heterostructure lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910215
  • Filename
    86746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378584