• DocumentCode
    1378620
  • Title

    Transistor 2-terminal switches

  • Author

    Har´el, Abraham

  • Author_Institution
    Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Pa.
  • Volume
    76
  • Issue
    3
  • fYear
    1957
  • fDate
    7/1/1957 12:00:00 AM
  • Firstpage
    328
  • Lastpage
    338
  • Abstract
    A 2-terminal self-biased memory-type switching device is an electronic bistable switch which has only two accessible terminals to all voltage and current sources. Such a switch can be realized with a single multiterminal semiconductor device exhibiting negative resistance, if advantage is taken of the "blocking voltage" concept. The blocking voltage is defined here as the forward voltage at a P-N junction at which the incremental conductance is a hundredfold greater than the incremental conductance at zero voltage. By proper circuit connections, the blocking voltage may be utilized to block injection of minority carriers in a semiconductor device until the voltage applied to the device exceeds a peak value. Such a device may exhibit low or negative a-c resistance after the peak value is exceeded. It is shown in the following discussion how the blocking-voltage concept may be applied to obtain negative resistance behavior from a junction transistor, a point-contact transistor, a modified double-base diode, or a modified tetrode. A few applications, mainly in the telephone field, are also indicated.
  • Keywords
    P-n junctions; Resistance; Resistors; Semiconductor diodes; Switches; Transistors;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1957.6372677
  • Filename
    6372677