• DocumentCode
    1378646
  • Title

    RF extraction method for source/drain overlap and depletion length of deep-submicron RF MOSFETs using intrinsic gate-bulk capacitance

  • Author

    Kim, J.-Y. ; Ko, B.-H. ; Choi, M.-K. ; Lee, Sang-Rim

  • Author_Institution
    Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
  • Volume
    46
  • Issue
    23
  • fYear
    2010
  • Firstpage
    1566
  • Lastpage
    1568
  • Abstract
    The source/drain overlap and depletion length in deep-submicron RF multifinger MOSFETs is accurately determined by a new RF method based on the direct extraction of the extrinsic gate-bulk capacitance using S-parameters biased at VGS > VTH and VDS = 0V. This RF method is proposed to remove the serious error of a conventional C-V method due to the influence of the extrinsic capacitance.
  • Keywords
    MOSFET; C-V method; RF extraction method; S-parameter; deep-submicron RF MOSFET; depletion length; extrinsic capacitance; extrinsic gate-bulk capacitance; intrinsic gate-bulk capacitance; source/drain overlap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.2174
  • Filename
    5635408
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378646