Title :
Inline optical filter using lifted-off GaAs/AlGaAs multilayer
Author :
Dell, J.M. ; Yoffe, G.W.
Author_Institution :
Telecom Australia Res. Labs., Clayton, Vic., Australia
Abstract :
A new inline optical filter is reported. A GaAs/AlGaAs multilayer interference filter was lifted off its GaAs substrate by selective etching, and was sandwiched between two gradient-index rod lenses. Near-theoretical performance was obtained, with over 20 dB rejection in the stop band and less than 0.5 dB insertion loss at transmission peaks. This type of filter could be extremely useful in wavelength division multiplexed systems.
Keywords :
III-V semiconductors; aluminium compounds; band-stop filters; etching; gallium arsenide; gradient index optics; light interference; optical filters; 0.5 dB; GaAs substrate; GaAs-AlGaAs; WDM systems; bandstop filter; gradient-index rod lenses; inline optical filter; insertion loss; multilayer interference filter; selective etching; wavelength division multiplexed systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910018
