DocumentCode
1378901
Title
Inline optical filter using lifted-off GaAs/AlGaAs multilayer
Author
Dell, J.M. ; Yoffe, G.W.
Author_Institution
Telecom Australia Res. Labs., Clayton, Vic., Australia
Volume
27
Issue
1
fYear
1991
Firstpage
26
Lastpage
27
Abstract
A new inline optical filter is reported. A GaAs/AlGaAs multilayer interference filter was lifted off its GaAs substrate by selective etching, and was sandwiched between two gradient-index rod lenses. Near-theoretical performance was obtained, with over 20 dB rejection in the stop band and less than 0.5 dB insertion loss at transmission peaks. This type of filter could be extremely useful in wavelength division multiplexed systems.
Keywords
III-V semiconductors; aluminium compounds; band-stop filters; etching; gallium arsenide; gradient index optics; light interference; optical filters; 0.5 dB; GaAs substrate; GaAs-AlGaAs; WDM systems; bandstop filter; gradient-index rod lenses; inline optical filter; insertion loss; multilayer interference filter; selective etching; wavelength division multiplexed systems;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910018
Filename
60846
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