DocumentCode
1379008
Title
980-nm High-Power Low-Divergence VCSELs Achieved by Optimization of Current Density Distribution
Author
Zhang, Xing ; Ning, Yongqiang ; Zeng, Yugang ; Zhang, Jinlong ; Fu, Xihong ; Qin, Li ; Liu, Yun ; Tong, Cunzhu ; Wang, Lijun
Author_Institution
State Key Lab. of Luminescence & Applic., Changchun Inst. of Opt., Fine Mech. & Phys., Changchun, China
Volume
48
Issue
1
fYear
2012
Firstpage
42
Lastpage
48
Abstract
In this paper, we report the design and fabrication of 980-nm vertical-cavity surface-emitting lasers and arrays that provide high output power and low divergence angle without any additional collimating optics. The influence of the structure of the contact on the current density distribution inside the active region was analyzed using the 3-D finite-element method. Uniform current distribution is achieved by optimizing the diameter of the p-contact, and the consequent improvement in beam divergence and thermal behavior is shown. A low divergence angle of 5.4° is obtained for a single device with continuous-wave (CW) power of 1.46 W at room temperature. The 8 × 8 array shows a divergence angle of 10.2° at 4 A with a CW power of 1.95 W. In addition, the measured results were compared with the results from devices without optimization of current density distribution.
Keywords
current density; finite element analysis; surface emitting lasers; 3D finite element method; active region; beam divergence; collimating optics; current 4 A; current density distribution; high-power low-divergence VCSEL; low divergence angle; p-contact; power 1.46 W; power 1.95 W; temperature 293 K to 298 K; thermal behavior; wavelength 980 nm; Apertures; Current density; Laser beams; Optimization; Power generation; Vertical cavity surface emitting lasers; High-power; low-divergence; semiconductor laser arrays; vertical-cavity surface-emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2011.2176719
Filename
6084697
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