Title :
Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
Author :
Lin, Horng-Chih ; Lin, Cheng-I ; Huang, Tiao-Yuan
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this letter, we study the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ultrathin and heavily phosphorous doped channel. The fabricated devices show excellent performance with a subthreshold swing of 240 mV/dec and an on/off current ratio of >; 107. Moreover, the JL device shows 23 times increase in the on-state current at a gate overdrive of 4 V as compared with the conventional control device with an undoped channel. The significant improvement in the current drive is ascribed to the inherently high carrier concentration contained in the channel of the JL device. These results evidence the great potential of the JL poly-Si TFTs for the manufacturing of future 3-D and flat-panel electronic products.
Keywords :
elemental semiconductors; flat panel displays; semiconductor doping; silicon; thin film transistors; 3D electronic products; Si; carrier concentration; current drive; flat-panel electronic products; gate overdrive; heavily phosphorous doped channel; n-type junctionless poly-Si thin-film transistors; on-off current ratio; subthreshold swing; ultrathin channel; voltage 4 V; Fabrication; Logic gates; Performance evaluation; Silicon; Thin film transistors; Very large scale integration; Junctionless (JL); poly-Si; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2171914
