• DocumentCode
    1379455
  • Title

    Room-Temperature Single-Photon Detector Based on InGaAs/InP Avalanche Photodiode With Multichannel Counting Ability

  • Author

    Liang, Yan ; Jian, Yi ; Chen, Xiuliang ; Wu, Guang ; Wu, E. ; Zeng, Heping

  • Author_Institution
    State Key Lab. of Precision Spectrosc., East China Normal Univ., Shanghai, China
  • Volume
    23
  • Issue
    2
  • fYear
    2011
  • Firstpage
    115
  • Lastpage
    117
  • Abstract
    Using a capacitance balancing circuit, we achieved infrared single-photon detection based on an InGaAs/InP avalanche photodiode (APD) with a low dark count rate and negligible afterpulse effect at room temperature of 290 K. Detection efficiency of 9.80% was attained with the dark count rate of 6.62 × 10-4 per gate, showing that the detector could work efficiently even at room temperature without Peltier cooling. Moreover, the detector was operated in an arbitrary gated mode, meaning that more than one gating pulse was applied on the APD during one period. The single-photon detector working in this mode was capable of multichannel photon counting for practical quantum key distribution.
  • Keywords
    III-V semiconductors; avalanche photodiodes; capacitance; gallium arsenide; indium compounds; photodetectors; photon counting; quantum cryptography; APD; InGaAs-InP; arbitrary gated mode; avalanche photodiode; capacitance balancing circuit; dark count rate; detection efficiency; multichannel counting ability; quantum key distribution; single-photon detector; temperature 290 K; Capacitance; Detectors; Indium gallium arsenide; Indium phosphide; Logic gates; Noise; Photonics; Avalanche photodiode (APD); single-photon detection;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2092756
  • Filename
    5638122