DocumentCode
1379489
Title
Global and Local Virtual Metrology Models for a Plasma Etch Process
Author
Lynn, Shane A. ; Ringwood, John ; MacGearailt, Niall
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Ireland, Maynooth, Ireland
Volume
25
Issue
1
fYear
2012
Firstpage
94
Lastpage
103
Abstract
Virtual metrology (VM) is the estimation of metrology variables that may be expensive or difficult to measure using readily available process information. This paper investigates the application of global and local VM schemes to a data set recorded from an industrial plasma etch chamber. Windowed VM models are shown to be the most accurate local VM scheme, capable of producing useful estimates of plasma etch rates over multiple chamber maintenance events and many thousands of wafers. Partial least-squares regression, artificial neural networks, and Gaussian process regression are investigated as candidate modeling techniques, with windowed Gaussian process regression models providing the most accurate results for the data set investigated.
Keywords
Gaussian processes; least squares approximations; measurement systems; neural nets; regression analysis; semiconductor industry; sputter etching; Gaussian process regression; VM scheme; artificial neural network; industrial plasma etch chamber; metrology variable; multiple chamber maintenance event; partial least square regression; plasma etch process; virtual metrology model; windowed VM model; Data models; Ground penetrating radar; Plasmas; Semiconductor device modeling; Semiconductor process modeling; Training; Training data; Gaussian process regression; local modeling; neural network applications; plasma etch; virtual metrology (VM);
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2011.2176759
Filename
6084764
Link To Document