• DocumentCode
    1379489
  • Title

    Global and Local Virtual Metrology Models for a Plasma Etch Process

  • Author

    Lynn, Shane A. ; Ringwood, John ; MacGearailt, Niall

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Ireland, Maynooth, Ireland
  • Volume
    25
  • Issue
    1
  • fYear
    2012
  • Firstpage
    94
  • Lastpage
    103
  • Abstract
    Virtual metrology (VM) is the estimation of metrology variables that may be expensive or difficult to measure using readily available process information. This paper investigates the application of global and local VM schemes to a data set recorded from an industrial plasma etch chamber. Windowed VM models are shown to be the most accurate local VM scheme, capable of producing useful estimates of plasma etch rates over multiple chamber maintenance events and many thousands of wafers. Partial least-squares regression, artificial neural networks, and Gaussian process regression are investigated as candidate modeling techniques, with windowed Gaussian process regression models providing the most accurate results for the data set investigated.
  • Keywords
    Gaussian processes; least squares approximations; measurement systems; neural nets; regression analysis; semiconductor industry; sputter etching; Gaussian process regression; VM scheme; artificial neural network; industrial plasma etch chamber; metrology variable; multiple chamber maintenance event; partial least square regression; plasma etch process; virtual metrology model; windowed VM model; Data models; Ground penetrating radar; Plasmas; Semiconductor device modeling; Semiconductor process modeling; Training; Training data; Gaussian process regression; local modeling; neural network applications; plasma etch; virtual metrology (VM);
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2011.2176759
  • Filename
    6084764