DocumentCode
1379510
Title
Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory
Author
Oldham, T.R. ; Chen, D. ; Friendlich, M. ; Carts, M.A. ; Seidleck, C.M. ; LaBel, K.A.
Author_Institution
Dell Services Fed. Gov., Inc., Seabrook, MD, USA
Volume
58
Issue
6
fYear
2011
Firstpage
2904
Lastpage
2910
Abstract
We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirradiated controls. For parts aged by repetitive Program/Erase (P/E) cycling, the effect of radiation was not statistically significant.
Keywords
CMOS integrated circuits; NAND circuits; ageing; flash memories; radiation effects; semiconductor device reliability; NAND flash memory retention; aging; baking; data retention; radiation effect; radiation exposure; repetitive program-erase cycling; CMOS technology; Flash memory; Leakage current; Logic gates; Nonvolatile memory; Radiation effects; Temperature distribution; CMOS; nonvolatile memory; radiation effects; reliability; retention;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2172816
Filename
6084767
Link To Document