Title :
Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory
Author :
Oldham, T.R. ; Chen, D. ; Friendlich, M. ; Carts, M.A. ; Seidleck, C.M. ; LaBel, K.A.
Author_Institution :
Dell Services Fed. Gov., Inc., Seabrook, MD, USA
Abstract :
We have compared the data retention of irradiated commercial NAND flash memories with that of unirradiated controls. For parts aged by baking at high temperature, there was a statistically significant difference between irradiated samples and unirradiated controls. For parts aged by repetitive Program/Erase (P/E) cycling, the effect of radiation was not statistically significant.
Keywords :
CMOS integrated circuits; NAND circuits; ageing; flash memories; radiation effects; semiconductor device reliability; NAND flash memory retention; aging; baking; data retention; radiation effect; radiation exposure; repetitive program-erase cycling; CMOS technology; Flash memory; Leakage current; Logic gates; Nonvolatile memory; Radiation effects; Temperature distribution; CMOS; nonvolatile memory; radiation effects; reliability; retention;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2172816
