• DocumentCode
    1379624
  • Title

    Process and temperature insensitive GaAs voltage reference

  • Author

    Frounchi, J. ; Harrold, S.J.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
  • Volume
    34
  • Issue
    4
  • fYear
    1998
  • fDate
    2/19/1998 12:00:00 AM
  • Firstpage
    356
  • Lastpage
    358
  • Abstract
    A simple GaAs voltage reference has been designed which has low sensitivity to the process parameters, and also has temperature compensated characteristics. The use of this design technique in SCFL digital circuits can result in a higher yield. The design technique can be applied to any IC technology offering square-law FET devices
  • Keywords
    III-V semiconductors; compensation; field effect logic circuits; gallium arsenide; reference circuits; GaAs; GaAs voltage reference; IC technology; SCFL digital circuit; design; process insensitivity; square-law FET device; temperature compensation; yield;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980201
  • Filename
    675692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1379624