Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

Author

Stocker, D. ; Schubert, E.F. ; Boutros, K.S. ; Flynn, J.S. ; Vaudo, R.P. ; Phanse, V.M. ; Redwing, J.M.

Author_Institution

Dept. of Phys., Boston Univ., MA, USA

Volume

34

Issue

4

fYear

1998

fDate

2/19/1998 12:00:00 AM

Firstpage

373

Lastpage

375

Abstract

Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000 Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10 μm thick GaN buffer layer on (0001) sapphire, and the GaN/In_0.09Ga_0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (101¯0) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3 MW/cm². Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarised

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; vapour phase epitaxial growth; GaN buffer layer; InGaN-GaN; InGaN/GaN double heterostructure laser; TE polarisation; cleaved facet; differential quantum efficiency; emission linewidth; hydride vapour phase epitaxy; metal organic vapour phase epitaxy; optical pumping; pulsed nitrogen laser; sapphire substrate; threshold power density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980323

Filename

675704