DocumentCode :
1379793
Title :
First Demonstration of a 10-Gb/s RZ End-to-End Four-Wave-Mixing Based Link at 1884 nm Using Silicon Nanowaveguides
Author :
Ophir, Noam ; Lau, Ryan K W ; Ménard, Michaël ; Salem, Reza ; Padmaraju, Kishore ; Okawachi, Yoshitomo ; Lipson, Michal ; Gaeta, Alexander L. ; Bergman, Keren
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume :
24
Issue :
4
fYear :
2012
Firstpage :
276
Lastpage :
278
Abstract :
We demonstrate a double-stage four-wave mixing (FWM) scheme in silicon nanowaveguides which allows effective optical time-division-multiplexed data generation and reception in the 2-μm region. The scheme is based on a first mixing stage which unicasts a high-speed return-to-zero stream from the C-band to 1884-nm, followed by a second mixing stage which wavelength converts the data from 1884-nm down to the O-band for detection. The 10-Gb/s data traverses an aggregate record distance of 909 nm in the cascaded wavelength-conversion and unicast stages, with a power penalty of 2.5 dB. This scheme effectively overcomes the lack of commercially-available high-performance sources and receivers at 2 μm by relying on telecommunication band components along with ultrabroad FWM silicon devices.
Keywords :
integrated optics; multiwave mixing; nanophotonics; optical links; optical receivers; optical waveguides; optical wavelength conversion; silicon-on-insulator; time division multiplexing; O-band detection; RZ end-to-end four-wave-mixing; Si; bit rate 10 Gbit/s; cascaded wavelength-conversion; double-stage four-wave mixing; high-performance sources; high-speed return-to-zero stream; optical receivers; optical time-division-multiplexed data generation; optical time-division-multiplexed data reception; power penalty; silicon nanowaveguides; telecommunication band; ultrabroad silicon devices; wavelength 1884 nm; wavelength 2 mum; Bit error rate; Optical fiber amplifiers; Optical receivers; Optical wavelength conversion; Silicon; Optical frequency conversion; optical Kerr effect; optical signal processing; silicon-on-insulator technology;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2176481
Filename :
6084814
Link To Document :
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