DocumentCode :
1379872
Title :
An electric analog of heat flow in power transistors
Author :
Reese, James ; Grannemann, W. W. ; Durant, J. R.
Author_Institution :
University of New Mexico, Albuquerque, N. Mex.
Volume :
78
Issue :
5
fYear :
1959
Firstpage :
640
Lastpage :
643
Abstract :
An electric analog of heat flow in alloyed-junction power transistors was constructed to facilitate a study of instantaneous crystal temperatures under various pulsed conditions. An equivalent Insertion transmission line using lumped constants was chosen as a suitable analog. The derivation of the transmission-line analog is given, along with construction and operating procedures. A short comparison of analog and experimental data is included.
Keywords :
Crystals; Junctions; Mathematical model; Resistance heating; Temperature measurement; Transistors;
fLanguage :
English
Journal_Title :
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher :
ieee
ISSN :
0097-2452
Type :
jour
DOI :
10.1109/TCE.1959.6372875
Filename :
6372875
Link To Document :
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